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| 2SK3697-01 N-CHANNEL SILICON POWER MOSFET 200407 FUJI POWER MOSFET Outline Drawings (mm) Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Non-Repetitive Maximum Avalanche current Repetitive Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Peak Diode Recovery di/dt Max. Power Dissipation Operating and Storage Temperature range Symbol VDS VDSX ID ID(puls] VGS IAR IAR EAS dVDS/dt dV/dt -di/dt PD Tch Tstg Ratings 600 600 42 2.7 168 30 42 21 828 20 5 100 600 2.50 +150 -55 to +150 Unit V V A A A V A A mJ kV/s kV/s A/s W C C Remarks VGS=-30V Ta=25C Equivalent circuit schematic Drain(D) Tch < 25C = < Tch =150C Gate(G) Note *2 VDS<600V = Note *3 Note *4 Tc=25C Ta=25C Source(S) Note *2:StartingTch=25C,L= 861H,VCC=60V See to the `Avalanche Energy' graph Note *3:IF < -ID, -di/dt = 100A/s,VCC< BVDSS,Tch< 150C = = = Note *4:IF < -ID, -dV/dt = 5kV/s,VCC< BVDSS,Tch<150C = = = Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time ton Turn-Off Time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche Capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol BVDSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS VDS=600V VGS=0V VDS=480V VGS=0V VGS=30V VDS=0V ID=21A VGS=10V ID=21A VDS=25V VDS=25V VGS=0V f=1MH VCC=300V ID=21A VGS=10V RGS=10 VCC=300V ID=42A VGS=10V L=861H Tch=25C IF=42A VGS=0V Tch=25C IF=42A VGS=0V -di/dt=100A/s Tch=25C Tch=25C Tch=125C Min. 600 3.0 Typ. Max. 5.0 25 2.0 100 0.17 Units V V A mA nA S pF 20 10 1.0 10 0.14 40 5100 7650 700 1050 48 72 60 90 90 135 180 270 30 45 105 160 44 65 30 45 1.10 160 1.00 ns nC 42 1.70 250 2.5 A V ns C Thermal characteristics Item Thermal resistance www.fujielectric.co.jp/fdt/scd Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 0.208 50.0 Units C/W C/W 1 2SK3697-01 Characteristics Allowable Power Dissipation PD=f(Tc) FUJI POWER MOSFET 800 120 110 Typical Output Characteristics ID=f(VDS):80 s pulse test,Tch=25 C 700 100 600 90 80 500 20V 10V 8V 7.0V PD [W] ID [A] 70 60 50 400 300 40 200 30 20 100 10 0 0 25 50 75 100 125 150 0 0 4 8 12 16 6.5V VGS=6.0V 20 24 Tc [C] VDS [V] 100 Typical Transfer Characteristic ID=f(VGS):80 s pulse test,VDS=25V,Tch=25C 100 Typical Transconductance gfs=f(ID):80 s pulse test,VDS=25V,Tch=25C 10 10 ID[A] 1 1 0.1 0.1 0.1 gfs [S] 0 1 2 3 4 5 6 7 8 9 10 1 10 100 VGS[V] ID [A] 0.4 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 s pulse test,Tch=25C VGS=6V 6.5V 0.5 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=21A,VGS=10V 0.4 0.3 RDS(on) [ ] 7.0V 8V 10V 20V RDS(on) [ ] 0.3 max. 0.2 0.2 typ. 0.1 0.1 0.0 0 20 40 60 80 100 0.0 -50 -25 0 25 50 75 100 125 150 ID [A] Tch [C] 2 2SK3697-01 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250A FUJI POWER MOSFET 7.0 6.5 6.0 5.5 5.0 14 Typical Gate Charge Characteristics VGS=f(Qg):ID=42A,Tch=25C 12 Vcc= 120V max. 10 480V 8 300V VGS(th) [V] 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 0 0 20 40 2 4 min. VGS [V] 6 60 80 100 120 140 160 180 Tch [C] Qg [nC] 10 5 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 100 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 s pulse test,Tch=25C 10 4 Ciss 10 C [pF] 10 3 Coss 1 10 2 Crss 1 IF [A] 0 1 2 3 10 10 10 10 10 0.1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 VDS [V] VSD [V] 10 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=10 Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=60V,I(AV)<=42A 2500 IAS=17A 2000 td(off) 10 2 1500 td(on) EAV [mJ] IAS=26A t [ns] 1000 IAS=42A tr tf 10 1 500 0 10 0 10 1 10 2 0 25 50 75 100 125 150 ID [A] starting Tch [C] 3 2SK3697-01 FUJI POWER MOSFET Maximum Avalanche Energy vs. starting Tch I(AV)=f(starting Tch):Vcc=60V 60 50 40 IAV [A] 30 Non-Repetitive (Single Pulse) 20 Repetitive 10 0 0 25 50 75 100 125 150 175 200 starting Tch [C] 10 2 Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25C,Vcc=60V Single Pulse Avalanche Current I AV [A] 10 1 10 0 10 -1 10 -8 10 -2 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] 10 1 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 0 Zth(ch-c) [C/W] 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] http://www.fujielectric.co.jp/fdt/scd/ 4 |
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